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[. . . ] HILONC V2 APPLICATION NOTE ~ Freedom of speech for smart machines ~ This page is intentionally left blank FICHE RECAPITULATIVE / REVISION HISTORY Ed 1 2 Date Date 03/09/2010 02/24/2011 Référence Reference URD1 OTL 5665. 3 003 72238 ed 01 URD1 OTL 5665. 3 003 72238 ed 02 Pages modifiées Observations / Changed pages Comments all Document creation 17, 21, 24, 25, Surge and transient on Vbat and protection 34, 37, 41 example and POK_IN relative waveforms and warnings Note d'étude / Technical document : URD1­ OTL 5665. 3­ 003 / 72238 Edition 02 HiLoNC V2 Application Note 11 March 2011 - page 3/66 SOMMAIRE / CONTENTS 1. OVERVIEW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1. 1 OBJECT OF THE DOCUMENT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1. 2 REFERENCE DOCUMENTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1. 3 MODIFICATION OF THIS DOCUMENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1. 4 CONVENTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2. BLOCK DIAGRAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3. HILONC FAMILY LEGACY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3. 1 PADS OUT AND NEW FEATURES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3. 2 EASY MIGRATION FROM HILONC (V1) TO HILONC V2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3. 2. 1 Migration without the use of new features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3. 2. 2 Migration with the use of new features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4. FUNCTIONAL INTEGRATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4. 1 HOW TO CONNECT TO A SIM CARD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4. 2 HOW TO CONNECT THE AUDIOS? [. . . ] SAGEMCOM does not recommend using this kind of backup battery technology. 4. 13. 4. 2 Capacitor battery These kinds of backup battery have not the drawbacks of the Lithium Ion rechargeable battery. As there are only capacitors: · The maximum discharge current is generally bigger, · There is no problem of over-discharge: the capacitor is able to recover its full charge even if its voltage has previously fallen to 0V. Moreover, this kind of battery is available in the same kind of package than the Lithium Ion cell and fully compatible on a mechanical point of view. The only disadvantage is that the capacity of this kind of battery is significantly smaller than Manganese Silicon Lithium Ion battery. But for this kind of use (supply internal RTC when the main battery is removed), the capacity is generally enough. SAGEMCOM strongly recommends using this kind of backup battery technology. Note d'étude / Technical document : URD1­ OTL 5665. 3­ 003 / 72238 Edition 02 HiLoNC V2 Application Note 11 March 2011 - page 30/66 4. 14 START THE MODULE PROPERLY AND AVOID POWER UP ISSUES. This chapter gives advices on how to make a proper start of the HiLoNC V2 module and sums up the side effects of a non compliant power up sequence or a non compliant hardware connection between the HiLoNC V2 and the host CPU. 4. 14. 1 Power domains Each HiLoNC V2 pad is linked to a specific internal power domain as the following: · VANA is typically 2. 85V and is a general purpose analogue dedicated voltage. · VBAT is typically 3. 2V to 4. 5V and is the main system voltage. · VRTC is typically 3. 0V and is the real time clock dedicated voltage. · VGPIO is typically 2. 8V and is a general purpose digital dedicated voltage. · VSIM is typically 1. 8V or 2. 9V and is the digital SIM card function dedicated voltage. · VPERM is typically 3. 0V and is the permanent voltage dedicated to launch the power up sequence. The next table gives the 51 HiLoNC V2 pads with all their relative power domains. HiLoNC Pads Signal Name Function Power domain E1 /INTMIC_P AUDIO 2. 85V E2 /AUX_ADC0 ADC 2. 85V E3 GND POWER 0V E4 VGPIO EXT_VDD 2. 8V E5 VBACKUP EXT_VDD 3. 0V E6 /PWM0 PWM 2. 85V E7 /RESET_IN RESET 2. 8V E8 SAGEMCOM FACTORY USE 2. 8V E9 SAGEMCOM FACTORY USE 2. 8V E10 SAGEMCOM FACTORY USE 2. 8V JTAG/FACTORY E11 NTRST 2. 8V E12 SAGEMCOM FACTORY USE 2. 8V E13 SAGEMCOM FACTORY USE 2. 8V E14 /GPIO2 GPIO 2. 8V E15 /GPIO1 GPIO 2. 8V E16 /RF_TX RF 2. 8V E17 /PCM_CLK PCM 2. 85V E18 /PCM_SYNC PCM 2. 85V E19 /PCM_OUT PCM 2. 85V E20 /PCM_IN PCM 2. 85V E21 GND POWER 0V E22 SAGEMCOM FACTORY USE 2. 8V E23 SAGEMCOM FACTORY USE 2. 8V E24 SAGEMCOM FACTORY USE 2. 8V E25 /UART0_RXD UART 0 2. 85V Figure 31 : HiLoNC V2 51 pads with their power domains Note d'étude / Technical document : URD1­ OTL 5665. 3­ 003 / 72238 Edition 02 HiLoNC V2 Application Note 11 March 2011 - page 31/66 HiLoNC Signal Name Function Power domain Pads E26 /GPIO3 GPIO 2. 8V E27 GND RF 0V E28 /ANTENNA RF 3. 7V E29 GND RF 0V E30 VBATT POWER 3. 7V E31 VBATT POWER 3. 7V E32 /UART0_TXD UART 0 2. 85V E33 /UART1_DSR UART 1 2. 8V E34 /UART1_DCD UART 1 2. 8V E35 /UART1_RI UART 1 2. 8V E36 /UART1_DTR UART 1 2. 8V E37 /UART1_RTS UART 1 2. 85V E38 /UART1_RX UART 1 2. 85V E39 /UART1_TX UART 1 2. 85V E40 /UART1_CTS UART 1 2. 85V E41 /POK_IN POWER ON 3. 0V E42 /PWM2 PWM 2. 85V E43 /PWM1 PWM 2. 85V E44 /SIM_CLK SIM 1. 8V or 2. 9V E45 /SIM_RST SIM 1. 8V or 2. 9V E46 /SIM_DATA SIM 1. 8V or 2. 9V E47 VSIM SIM 1. 8V or 2. 9V E48 VBATT POWER 3. 7V E49 GND POWER 0V E50 /HSET_OUT_P AUDIO 3. 7V E51 /HSET_OUT_N AUDIO 3. 7V Figure 32 : HiLoNC V2 51 pads with their power domains. . . continued 4. 14. 2 IO DC PRESENCE BEFORE POWER ON. When the VBAT is available but the module not yet started, the following I/O's raised their output. · VBACKUP raise to 3V · POK_IN raise to 3V · HSET_N raise to 1. 4V · HSET_P raise to 1. 4V 4. 14. 3 SIDE EFFECTS OF A RETRO SUPPLY (CURRENT RE-INJECTION) Interactions or connections between the HiLoNC V2 module and the external systems can lead to retro power supply side effects, or current re-injection through pads while the module is not yet fully powered up (means VBAT lower than its minimum 3. 2V). If some precaution and simple rules are not followed, those effects can in worst case result in a deadlock module, not able to start up or to communicate. Deadlock could happen if the retro supply occurs before the module start. The flow back current could in the worst case prevent the module to start. The very same behaviour can happen in a normal use conditions when the lines connecting to the module to the external system uses a non compliant voltage higher than the module IO power domain (2. 85V). This results in a current flow back inside the module and can lead to a deadlock system on the next start if this retro supply has continued while the system was powered off or under powered (under 3. 2V). An over voltage on any line can also damage the HiLoNC V2 module. Note d'étude / Technical document : URD1­ OTL 5665. 3­ 003 / 72238 Edition 02 HiLoNC V2 Application Note 11 March 2011 - page 32/66 Those consequences are very rare but exist. Therefore, the rules and advises given on every chapter of this application note must be followed. To avoid any power up issue, here are the rules: Avoid any over voltage on the buses lines connected to the module. [. . . ] C, 3 If this maximum 7 days duration can not be fulfilled, the HiLoNC V2 part must be baked again. Unless the factory floor conditions are perfectly controlled, SAGEMCOM does not recommend to wait until this maximum 7 days duration before soldering the HiLoNC V2 on customer's board. For any module exposed to ambient moisture it is therefore highly recommended to proceed to a baking according to the JEDEC (125° during 24H) to dry the module before any soldering process C 10. 2 PACKAGE The HiLoNC V2 module is delivered in Tape and Reel package which is hermetically sealed to prevent from moisture and ESD. The characteristics of the T&R are given in the drawing below. Note d'étude / Technical document : URD1­ OTL 5665. 3­ 003 / 72238 Edition 02 HiLoNC V2 Application Note 11 March 2011 - page 50/66 Figure 51: Factory Tape dimensions Note d'étude / Technical document : URD1­ OTL 5665. 3­ 003 / 72238 Edition 02 HiLoNC V2 Application Note 11 March 2011 - page 51/66 10. 3 STENCIL Below are given soldering characteristics to report the HiLoNC V2 on the customer's board. [. . . ]

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